International Journal of Intelligent Systems and Applications(IJISA)
ISSN: 2074-904X (Print), ISSN: 2074-9058 (Online)
Published By: MECS Press
IJISA Vol.4, No.5, May. 2012
Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate
Full Text (PDF, 487KB), PP.16-22
The scaling of simple gate transistors requires the scaling and transistor elements like source/drain junction became difficult to scale further after a limit due to adverse effect of electrostatic and short-channel performance. The solution of the problem is tri-gate where we can increase the performance without increasing the width and without scaling. In this paper we have described the parameter of tri-gate and taking the high dielectric as substrate.
Cite This Paper
Viranjay M. Srivastava, Setu P. Singh,"Analysis and Design of Tri-Gate MOSFET with High Dielectrics Gate", International Journal of Intelligent Systems and Applications(IJISA), vol.4, no.5, pp.16-22, 2012. DOI: 10.5815/ijisa.2012.05.03
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