Work place: Department of Computer Science & Engineering, University of Engineering & Management, Jaipur, Rajasthan-303807, India
E-mail: soumya.sen@uem.edu.in
Website: https://orcid.org/0000-0002-6354-5206
Research Interests:
Biography
Soumya Sen received his Master’s degree in Microelectronics and VLSI Technology from West Bengal University of Technology, Kolkata, West Bengal, India and pursuing his PhD from Dr. B. R Ambedkar National Institute of Technology Jalandhar, Punjab with specialization in Nanoelectronics. He is currently an Assistant Professor in the Department of Computer Science & Engineering at the University of Engineering & Management, Jaipur, India. His research interests include and VLSI design, Nanostructures (Tunnel FETs, Nanotubes, Nanowires) and modelling of devices.
DOI: https://doi.org/10.5815/ijem.2025.02.03, Pub. Date: 8 Apr. 2025
This work comprehensively analyses the device physics of a charged plasma-doped InGaAs5.86GaAs5.65 Tunnel field effect transistor (TFET) biosensor featuring a dual metal gate configuration. The device is simulated using Silvaco Atlas TCAD, with HfO2 employed as the gate dielectric alongside a nanocavity to enhance biosensing performance. The investigation focuses on crucial device parameters, including energy band profiles, potential distribution, electric field variations in both lateral and vertical directions, and electron concentration dynamics. Outcomes indicate that the biosensor keeps a superior response in the ambipolar region, with a drain current (ID) or an on current (ION) of ~10-4, due to the amalgam of the dual metal gate and InGaAs/GaAs heterostructure. This configuration also assists in supervising the flow of the carriers and, therefore, improves biosensing sensitivity and specificity. The results emphasize the advantage of this TFET configuration for next-generation biosensing technologies.
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